Electron caustic lithography

Tunable caustic phenomena in electron wavefields.

Novel caustic phenomena, which contain fold, butterfly and elliptic umbilic catastrophes, are observed in defocused images of two approximately collinear oppositely biased metallic tips in a transmission electron microscope. The observed patterns depend sensitively on defocus, on the applied voltage between the tips and on their separation and lateral offset. Their main features are interpreted...

Dopant Driven Electron Beam Lithography

Introduction to Electron Beam Lithography

Electron Beam Lithography is a specialized technique for creating extremely fine patterns (~ 50 nm). Derived from the early scanning electron microscopes, the technique in brief consists of scanning a beam of electrons across a surface covered with a resist film sensitive to those electrons, thus depositing energy in the desired pattern in the resist film. The main attributes of the technology ...

Computer Simulation from Electron Beam Lithography to Optical Lithography

Simulation of electron beam lithography and optical lithography has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulation which was based on ideal mask design, the combined simulation has shown that mask distortion due to electron proximity effect play an important role in worsening the optical ...

Patterned negative electron affinity photocathodes for maskless electron beam lithography

This work focuses on two issues crucial to achieving high throughput with a negative electron affinity semiconductor photocathode source. Monte Carlo simulations indicate that for a 50 kV system, as much as 8 mA of current may be delivered to the wafer to achieve a raw throughput of 20 8 in. wafers per hour with 0.1 mm minimum feature size ~assuming a resist sensitivity of 10 mC/cm!. In order t...